A Turnstile Based Single Electron Memory Element
نویسندگان
چکیده
In this paper we investigate single electron tunneling (SET) devices from the logic design perspective, using the SET tunnel junction’s ability to control the transport of individual electrons. More in particular, we investigate the behavior of a modified version of the SET turnstile circuit and propose applying the circuit as a single electron encoded logic (SEEL) memory element. We analyze the conditions under which the circuit manifests built-in memory and reset functionality. We demonstrate the memory element by simulating the behavior of an instance of the circuit. Keywords—single electron tunneling; SET, single electron encoded logic; SEEL; memory element.
منابع مشابه
Digital to Analog Conversion Performed in Single Electron Technology
In this paper we investigate SET devices from the logic design perspective, using the SET tunnel junction’s ability to control the transport of individual electrons. We introduce a modified turnstile circuit with clock and enable control signals, which has built-in memory and reset functionality. Using the modified turnstile circuit as a building block, we propose a scheme for an n-input digita...
متن کاملTransfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors
A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage i...
متن کاملElectron waiting times of a periodically driven single-electron turnstile
We investigate the distribution of waiting times between electrons emitted from a periodically driven single-electron turnstile. To this end, we develop a scheme for analytic calculations of the waiting time distributions for arbitrary periodic driving protocols. We illustrate the general framework by considering a driven tunnel junction before moving on to the more involved single-electron tur...
متن کاملRobust HSPICE modeling of a single electron turnstile
This paper presents a novel HSPICE circuit model for designing and simulating a Single-Electron (SE) turnstile, as applicable at the nanometric feature sizes. The proposed SE model consists of two nearly similar parts whose operation is independent of each other; this disjoint feature permits the accurate and reliable modeling of the sequential transfer of electrons through the turnstile in the...
متن کاملCompact non-binary fast adders using single-electron devices
This paper proposes compact adders that are based on non-binary redundant number systems and single-electron (SE) devices. The adders use the number of single electrons to represent discrete multiple-valued logic state and manipulate single electrons to perform arithmetic operations. These adders have fast speed and are referred as fast adders. We develop a family of SE transfer circuits based ...
متن کامل